IXYS - IXGT39N60BD1

KEY Part #: K6423970

[9469PC Stock]


    Nimewo Pati:
    IXGT39N60BD1
    Manifakti:
    IXYS
    Detaye deskripsyon:
    IGBT 600V 76A 200W TO268.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in IXYS IXGT39N60BD1 electronic components. IXGT39N60BD1 can be shipped within 24 hours after order. If you have any demands for IXGT39N60BD1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXGT39N60BD1 Atribi pwodwi yo

    Nimewo Pati : IXGT39N60BD1
    Manifakti : IXYS
    Deskripsyon : IGBT 600V 76A 200W TO268
    Seri : HiPerFAST™
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 76A
    Kouran - Pèseptè batman (Icm) : 152A
    Vce (sou) (Max) @ Vge, Ic : 1.7V @ 15V, 39A
    Pouvwa - Max : 200W
    Oblije chanje enèji : 4mJ (off)
    Kalite Antre : Standard
    Gate chaje : 110nC
    Td (on / off) @ 25 ° C : 25ns/250ns
    Kondisyon egzamen an : 480V, 39A, 4.7 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 25ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    Pake Aparèy Founisè : TO-268