[9469PC Stock]
- Nimewo Pati:
- IXGT39N60BD1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 600V 76A 200W TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - JFETs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXGT39N60BD1 electronic components. IXGT39N60BD1 can be shipped within 24 hours after order. If you have any demands for IXGT39N60BD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGT39N60BD1 Atribi pwodwi yo
Nimewo Pati :
IXGT39N60BD1
Manifakti :
IXYS
Deskripsyon :
IGBT 600V 76A 200W TO268
Seri :
HiPerFAST™
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
76A
Kouran - Pèseptè batman (Icm) :
152A
Vce (sou) (Max) @ Vge, Ic :
1.7V @ 15V, 39A
Pouvwa - Max :
200W
Oblije chanje enèji :
4mJ (off)
Kalite Antre :
Standard
Gate chaje :
110nC
Td (on / off) @ 25 ° C :
25ns/250ns
Kondisyon egzamen an :
480V, 39A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) :
25ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè :
TO-268
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