Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 30A TO220AC
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
30A
Voltage - Forward (Vf) (Max) @ Si :
1.5V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
60ns
Kouran - Fèy Reverse @ Vr :
250µA @ 600V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-55°C ~ 175°C