Vishay Semiconductor Diodes Division - EGL34DHE3/83

KEY Part #: K6447648

[1353PC Stock]


    Nimewo Pati:
    EGL34DHE3/83
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 200V 500MA DO213.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Tiristors - TRIACs and Transistors - IGBTs - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division EGL34DHE3/83 electronic components. EGL34DHE3/83 can be shipped within 24 hours after order. If you have any demands for EGL34DHE3/83, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EGL34DHE3/83 Atribi pwodwi yo

    Nimewo Pati : EGL34DHE3/83
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 200V 500MA DO213
    Seri : SUPERECTIFIER®
    Estati Pati : Discontinued at Digi-Key
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 200V
    Kouran - Mwayèn Rèktifye (Io) : 500mA
    Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 500mA
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 50ns
    Kouran - Fèy Reverse @ Vr : 5µA @ 200V
    Kapasite @ Vr, F : 7pF @ 4V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : DO-213AA (Glass)
    Pake Aparèy Founisè : DO-213AA (GL34)
    Operating Tanperati - Junction : -65°C ~ 175°C

    Ou ka enterese tou
    • RURD660S9A-F085

      ON Semiconductor

      DIODE GEN PURP 600V 6A DPAK. Rectifiers Ultrafast Power Rectifier, 6A 600V

    • RURD660S9A-F085P

      ON Semiconductor

      UFR DPAK PN 6A 200V. Rectifiers 6A, 600V Ultrafast Diodes

    • FFSD08120A

      ON Semiconductor

      1200V 8A SIC SBD. Schottky Diodes & Rectifiers 1200V 8A SIC SBD

    • RURD460S9A

      ON Semiconductor

      DIODE GEN PURP 600V 4A TO252. Diodes - General Purpose, Power, Switching Ultra Fast Diode 4a 600V

    • 1PS193,115

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.

    • 1PS193,135

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.