BAQ135-GS18 Pricing (USD) [1730596PC Stock]
- 1 pcs$0.02137
- 10,000 pcs$0.01977
- Nimewo Pati:
- BAQ135-GS18
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 125V 200MA SOD80. Diodes - General Purpose, Power, Switching 125 Volt 200mA 2.0 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BAQ135-GS18 electronic components. BAQ135-GS18 can be shipped within 24 hours after order. If you have any demands for BAQ135-GS18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAQ135-GS18 Atribi pwodwi yo
Nimewo Pati :
BAQ135-GS18
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 125V 200MA SOD80
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
125V
Kouran - Mwayèn Rèktifye (Io) :
200mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 100mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1nA @ 60V
Kapasite @ Vr, F :
3pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SOD-80 Variant
Pake Aparèy Founisè :
SOD-80 QuadroMELF
Operating Tanperati - Junction :
-65°C ~ 175°C
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