STD19N3LLH6AG Pricing (USD) [218303PC Stock]
- 1 pcs$0.16943
- 2,500 pcs$0.15140
- Nimewo Pati:
- STD19N3LLH6AG
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 30V 10A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STD19N3LLH6AG electronic components. STD19N3LLH6AG can be shipped within 24 hours after order. If you have any demands for STD19N3LLH6AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD19N3LLH6AG Atribi pwodwi yo
Nimewo Pati :
STD19N3LLH6AG
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 30V 10A DPAK
Seri :
Automotive, AEC-Q101, STripFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
33 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.7nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
321pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
30W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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