NXP USA Inc. - BY329X-1200,127

KEY Part #: K6452113

[14028PC Stock]


    Nimewo Pati:
    BY329X-1200,127
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    DIODE GEN PURP 1.2KV 8A TO220F.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. BY329X-1200,127 electronic components. BY329X-1200,127 can be shipped within 24 hours after order. If you have any demands for BY329X-1200,127, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BY329X-1200,127 Atribi pwodwi yo

    Nimewo Pati : BY329X-1200,127
    Manifakti : NXP USA Inc.
    Deskripsyon : DIODE GEN PURP 1.2KV 8A TO220F
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1200V
    Kouran - Mwayèn Rèktifye (Io) : 8A
    Voltage - Forward (Vf) (Max) @ Si : 1.85V @ 20A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 145ns
    Kouran - Fèy Reverse @ Vr : 1mA @ 1000V
    Kapasite @ Vr, F : -
    Mounting Kalite : Through Hole
    Pake / Ka : TO-220-2 Full Pack, Isolated Tab
    Pake Aparèy Founisè : TO-220FP
    Operating Tanperati - Junction : 150°C (Max)

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