IXTH12N100L Pricing (USD) [6766PC Stock]
- 1 pcs$6.73272
- 30 pcs$6.69923
- Nimewo Pati:
- IXTH12N100L
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 12A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Tiristors - TRIACs and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH12N100L electronic components. IXTH12N100L can be shipped within 24 hours after order. If you have any demands for IXTH12N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH12N100L Atribi pwodwi yo
Nimewo Pati :
IXTH12N100L
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 12A TO-247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
1.3 Ohm @ 500mA, 20V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
155nC @ 20V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
400W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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