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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  4. Transistors - FETs, MOSFETs - Single
  5. NVD5C648NLT4G

ON Semiconductor - NVD5C648NLT4G

KEY Part #: K6392882

NVD5C648NLT4G Pricing (USD) [161895PC Stock]

  • 1 pcs$0.22846
Nimewo Pati:
NVD5C648NLT4G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
T6 60V LL DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVD5C648NLT4G electronic components. NVD5C648NLT4G can be shipped within 24 hours after order. If you have any demands for NVD5C648NLT4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVD5C648NLT4G Atribi pwodwi yo

Nimewo Pati : NVD5C648NLT4G
Manifakti : ON Semiconductor
Deskripsyon : T6 60V LL DPAK
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Ta), 89A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.1 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 72W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK (SINGLE GAUGE)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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