V20120SG-E3/4W Pricing (USD) [142295PC Stock]
- 1 pcs$0.25993
- 1,000 pcs$0.23664
- Nimewo Pati:
- V20120SG-E3/4W
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 120V 20A TO220AB. Schottky Diodes & Rectifiers 20 Amp 120 Volt Single TrenchMOS
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Zener - Arrays and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division V20120SG-E3/4W electronic components. V20120SG-E3/4W can be shipped within 24 hours after order. If you have any demands for V20120SG-E3/4W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
V20120SG-E3/4W Atribi pwodwi yo
Nimewo Pati :
V20120SG-E3/4W
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 120V 20A TO220AB
Seri :
TMBS®
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
120V
Kouran - Mwayèn Rèktifye (Io) :
20A
Voltage - Forward (Vf) (Max) @ Si :
1.33V @ 20A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
250µA @ 120V
Kapasite @ Vr, F :
-
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220AB
Operating Tanperati - Junction :
-40°C ~ 150°C
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