FDD86369 Pricing (USD) [127205PC Stock]
- 1 pcs$0.29077
- Nimewo Pati:
- FDD86369
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CHANNEL 80V 90A TO252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Modil pouvwa chofè, Diodes - Zener - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDD86369 electronic components. FDD86369 can be shipped within 24 hours after order. If you have any demands for FDD86369, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD86369 Atribi pwodwi yo
Nimewo Pati :
FDD86369
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CHANNEL 80V 90A TO252
Seri :
Automotive, AEC-Q101, PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2530pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tj)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-PAK (TO-252)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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