[2952PC Stock]
- Nimewo Pati:
- 62-0095PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 10A/12A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies 62-0095PBF electronic components. 62-0095PBF can be shipped within 24 hours after order. If you have any demands for 62-0095PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
62-0095PBF Atribi pwodwi yo
Nimewo Pati :
62-0095PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta), 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.55V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
900pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
-
Pake / Ka :
-
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