Infineon Technologies - BSM75GD120DN2BOSA1

KEY Part #: K6534166

BSM75GD120DN2BOSA1 Pricing (USD) [501PC Stock]

  • 1 pcs$92.62090

Nimewo Pati:
BSM75GD120DN2BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 2 LOW POWER ECONO3-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Diodes - RF and Transistors - Objektif espesyal ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM75GD120DN2BOSA1 Atribi pwodwi yo

Nimewo Pati : BSM75GD120DN2BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 2 LOW POWER ECONO3-1
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 103A
Pouvwa - Max : 520W
Vce (sou) (Max) @ Vge, Ic : 3V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) : 1.5mA
Antre kapasite (Cies) @ Vce : 5.1nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module