Vishay Semiconductor Diodes Division - 1N4448W-E3-08

KEY Part #: K6455709

1N4448W-E3-08 Pricing (USD) [1945524PC Stock]

  • 1 pcs$0.01901
  • 3,000 pcs$0.01815
  • 6,000 pcs$0.01578
  • 15,000 pcs$0.01342
  • 30,000 pcs$0.01262
  • 75,000 pcs$0.01184
  • 150,000 pcs$0.01052

Nimewo Pati:
1N4448W-E3-08
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4448W-E3-08 Atribi pwodwi yo

Nimewo Pati : 1N4448W-E3-08
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 75V 150MA SOD123
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 75V
Kouran - Mwayèn Rèktifye (Io) : 150mA
Voltage - Forward (Vf) (Max) @ Si : 720mV @ 5mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 5µA @ 75V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : -55°C ~ 150°C

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