Microsemi Corporation - APT30GP60BDQ1G

KEY Part #: K6422409

APT30GP60BDQ1G Pricing (USD) [8013PC Stock]

  • 1 pcs$5.14297
  • 10 pcs$4.63043
  • 25 pcs$4.21856
  • 100 pcs$3.80708
  • 250 pcs$3.49838
  • 500 pcs$3.18971

Nimewo Pati:
APT30GP60BDQ1G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 600V 100A 463W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT30GP60BDQ1G Atribi pwodwi yo

Nimewo Pati : APT30GP60BDQ1G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 600V 100A 463W TO247
Seri : POWER MOS 7®
Estati Pati : Not For New Designs
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 100A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 30A
Pouvwa - Max : 463W
Oblije chanje enèji : 260µJ (on), 250µJ (off)
Kalite Antre : Standard
Gate chaje : 90nC
Td (on / off) @ 25 ° C : 13ns/55ns
Kondisyon egzamen an : 400V, 30A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 [B]