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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. TPC8035-H(TE12L,QM

Toshiba Semiconductor and Storage - TPC8035-H(TE12L,QM

KEY Part #: K6407332

[1011PC Stock]

    Nimewo Pati:
    TPC8035-H(TE12L,QM
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET N-CH 30V 18A SOP8 2-6J1B.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage TPC8035-H(TE12L,QM electronic components. TPC8035-H(TE12L,QM can be shipped within 24 hours after order. If you have any demands for TPC8035-H(TE12L,QM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPC8035-H(TE12L,QM Atribi pwodwi yo

    Nimewo Pati : TPC8035-H(TE12L,QM
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET N-CH 30V 18A SOP8 2-6J1B
    Seri : U-MOSVI-H
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 3.2 mOhm @ 9A, 10V
    Vgs (th) (Max) @ Id : 2.3V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 82nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 7800pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1W (Ta)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-SOP (5.5x6.0)
    Pake / Ka : 8-SOIC (0.173", 4.40mm Width)

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