Global Power Technologies Group - GSID200A170S3B1

KEY Part #: K6532559

GSID200A170S3B1 Pricing (USD) [660PC Stock]

  • 1 pcs$70.68933
  • 4 pcs$70.33764

Nimewo Pati:
GSID200A170S3B1
Manifakti:
Global Power Technologies Group
Detaye deskripsyon:
SILICON IGBT MODULES.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - Objektif espesyal and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Global Power Technologies Group GSID200A170S3B1 electronic components. GSID200A170S3B1 can be shipped within 24 hours after order. If you have any demands for GSID200A170S3B1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GSID200A170S3B1 Atribi pwodwi yo

Nimewo Pati : GSID200A170S3B1
Manifakti : Global Power Technologies Group
Deskripsyon : SILICON IGBT MODULES
Seri : Amp+™
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : 2 Independent
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 400A
Pouvwa - Max : 1630W
Vce (sou) (Max) @ Vge, Ic : 1.9V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 26nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : D-3 Module
Pake Aparèy Founisè : D3

Ou ka enterese tou
  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.