Nimewo Pati :
GSID200A170S3B1
Manifakti :
Global Power Technologies Group
Deskripsyon :
SILICON IGBT MODULES
Nou konte genyen :
2 Independent
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
400A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) :
1mA
Antre kapasite (Cies) @ Vce :
26nF @ 25V
Operating Tanperati :
-40°C ~ 150°C
Mounting Kalite :
Chassis Mount