Diodes Incorporated - ZXMN6A07FQTA

KEY Part #: K6393774

ZXMN6A07FQTA Pricing (USD) [446296PC Stock]

  • 1 pcs$0.08288

Nimewo Pati:
ZXMN6A07FQTA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 41V-60V SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Diodes - RF and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN6A07FQTA Atribi pwodwi yo

Nimewo Pati : ZXMN6A07FQTA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 41V-60V SOT23
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 250 mOhm @ 1.8A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 3.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 166pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 625mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3