DDB6U215N16LHOSA1 Pricing (USD) [641PC Stock]
- 1 pcs$72.42381
- Nimewo Pati:
- DDB6U215N16LHOSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE MODULE GP 1600V.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies DDB6U215N16LHOSA1 electronic components. DDB6U215N16LHOSA1 can be shipped within 24 hours after order. If you have any demands for DDB6U215N16LHOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DDB6U215N16LHOSA1 Atribi pwodwi yo
Nimewo Pati :
DDB6U215N16LHOSA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE MODULE GP 1600V
Seri :
-
Estati Pati :
Active
Konfigirasyon dyòd :
3 Independent
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1600V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
-
Voltage - Forward (Vf) (Max) @ Si :
1.61V @ 300A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10mA @ 1600V
Operating Tanperati - Junction :
-40°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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