Diodes Incorporated - ZXMN2A03E6TA

KEY Part #: K6404805

ZXMN2A03E6TA Pricing (USD) [248099PC Stock]

  • 1 pcs$0.14908
  • 3,000 pcs$0.13247

Nimewo Pati:
ZXMN2A03E6TA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 20V 3.6A SOT-23-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN2A03E6TA Atribi pwodwi yo

Nimewo Pati : ZXMN2A03E6TA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 20V 3.6A SOT-23-6
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 55 mOhm @ 7.2A, 4.5V
Vgs (th) (Max) @ Id : 700mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.2nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 837pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.1W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-6
Pake / Ka : SOT-23-6