RD3L080SNTL1 Pricing (USD) [241158PC Stock]
- 1 pcs$0.15337
- Nimewo Pati:
- RD3L080SNTL1
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- NCH 60V 8A POWER MOSFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Zener - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RD3L080SNTL1 electronic components. RD3L080SNTL1 can be shipped within 24 hours after order. If you have any demands for RD3L080SNTL1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RD3L080SNTL1 Atribi pwodwi yo
Nimewo Pati :
RD3L080SNTL1
Manifakti :
Rohm Semiconductor
Deskripsyon :
NCH 60V 8A POWER MOSFET
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
80 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
9.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
380pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
15W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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