ISSI, Integrated Silicon Solution Inc - IS46R16160D-6TLA1-TR

KEY Part #: K938176

IS46R16160D-6TLA1-TR Pricing (USD) [19456PC Stock]

  • 1 pcs$2.81769
  • 1,500 pcs$2.80368

Nimewo Pati:
IS46R16160D-6TLA1-TR
Manifakti:
ISSI, Integrated Silicon Solution Inc
Detaye deskripsyon:
IC DRAM 256M PARALLEL 66TSOP II. DRAM Automotive 256M,2.5V DDR1,64Mx8,166MHz
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Lineyè - Anplifikatè - Objektif Espesyal, Lineyè - Anplifikatè - Amps Videyo ak Modil yo, Revèy / Distribisyon - Liy reta, Embedded - CPLDs (Aparèy lojik Pwogramè konplèks), Lineyè - multiplikatè analog, divizeur, PMIC - Lighting, Ballast regulateur, PMIC - Chofè Gate and PMIC - V / F ak F / V Convertisseurs ...
Avantaj konpetitif:
We specialize in ISSI, Integrated Silicon Solution Inc IS46R16160D-6TLA1-TR electronic components. IS46R16160D-6TLA1-TR can be shipped within 24 hours after order. If you have any demands for IS46R16160D-6TLA1-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IS46R16160D-6TLA1-TR Atribi pwodwi yo

Nimewo Pati : IS46R16160D-6TLA1-TR
Manifakti : ISSI, Integrated Silicon Solution Inc
Deskripsyon : IC DRAM 256M PARALLEL 66TSOP II
Seri : -
Estati Pati : Active
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - DDR
Size memwa : 256Mb (16M x 16)
Frè frekans lan : 166MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : 700ps
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 2.3V ~ 2.7V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 66-TSSOP (0.400", 10.16mm Width)
Pake Aparèy Founisè : 66-TSOP II

Ou ka enterese tou
  • AT27C4096-90PU

    Microchip Technology

    IC EPROM 4M PARALLEL 40DIP. EPROM 4Mb (256Kx16) OTP 5V 90ns

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • W94AD2KBJX5I

    Winbond Electronics

    IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz, Ind temp

  • TC58BYG2S0HBAI4

    Toshiba Memory America, Inc.

    4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)

  • TC58BVG2S0HBAI4

    Toshiba Memory America, Inc.

    IC FLASH 4G PARALLEL 63TFBGA. NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)