ZXMN10B08E6TA Pricing (USD) [272776PC Stock]
- 1 pcs$0.13560
- 3,000 pcs$0.12049
- Nimewo Pati:
- ZXMN10B08E6TA
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 100V 1.6A SOT23-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN10B08E6TA electronic components. ZXMN10B08E6TA can be shipped within 24 hours after order. If you have any demands for ZXMN10B08E6TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN10B08E6TA Atribi pwodwi yo
Nimewo Pati :
ZXMN10B08E6TA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 100V 1.6A SOT23-6
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.3V, 10V
RD sou (Max) @ Id, Vgs :
230 mOhm @ 1.6A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
497pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-26
Pake / Ka :
SOT-23-6
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