Vishay Semiconductor Diodes Division - SS5P6HM3/86A

KEY Part #: K6444069

[7357PC Stock]


    Nimewo Pati:
    SS5P6HM3/86A
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 60V 5A TO277A.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division SS5P6HM3/86A electronic components. SS5P6HM3/86A can be shipped within 24 hours after order. If you have any demands for SS5P6HM3/86A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SS5P6HM3/86A Atribi pwodwi yo

    Nimewo Pati : SS5P6HM3/86A
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 60V 5A TO277A
    Seri : eSMP®
    Estati Pati : Discontinued at Digi-Key
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 60V
    Kouran - Mwayèn Rèktifye (Io) : 5A
    Voltage - Forward (Vf) (Max) @ Si : 690mV @ 5A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 150µA @ 60V
    Kapasite @ Vr, F : 200pF @ 4V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-277, 3-PowerDFN
    Pake Aparèy Founisè : TO-277A (SMPC)
    Operating Tanperati - Junction : -55°C ~ 150°C

    Ou ka enterese tou
    • RJU60C2SDPD-E0#J2

      Renesas Electronics America

      DIODE GEN PURP 600V 5A TO252. Diodes - General Purpose, Power, Switching Fast Recovery Diode 600V TO-252 IF=8A

    • RJU60C3SDPD-E0#J2

      Renesas Electronics America

      DIODE GEN PURP 600V 10A TO252. Diodes - General Purpose, Power, Switching FRD 600V/30A/90ns Trr/TO-252

    • BAS16-D87Z

      ON Semiconductor

      DIODE GEN PURP 85V 200MA SOT23-3.

    • VS-50WQ06FNTRRPBF

      Vishay Semiconductor Diodes Division

      DIODE SCHOTTKY 60V 5.5A DPAK.

    • VS-50WQ06FNTRLPBF

      Vishay Semiconductor Diodes Division

      DIODE SCHOTTKY 60V 5.5A DPAK.

    • VS-50WQ06FNTRPBF

      Vishay Semiconductor Diodes Division

      DIODE SCHOTTKY 60V 5.5A DPAK.