[7355PC Stock]
- Nimewo Pati:
- RJU60C3SDPD-E0#J2
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- DIODE GEN PURP 600V 10A TO252. Diodes - General Purpose, Power, Switching FRD 600V/30A/90ns Trr/TO-252
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJU60C3SDPD-E0#J2 electronic components. RJU60C3SDPD-E0#J2 can be shipped within 24 hours after order. If you have any demands for RJU60C3SDPD-E0#J2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJU60C3SDPD-E0#J2 Atribi pwodwi yo
Nimewo Pati :
RJU60C3SDPD-E0#J2
Manifakti :
Renesas Electronics America
Deskripsyon :
DIODE GEN PURP 600V 10A TO252
Seri :
-
Estati Pati :
Last Time Buy
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
2.1V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
90ns
Kouran - Fèy Reverse @ Vr :
1µA @ 600V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252
Operating Tanperati - Junction :
150°C (Max)
Dènye nouvèl
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RJU60C2SDPD-E0#J2
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DIODE GEN PURP 600V 5A TO252. Diodes - General Purpose, Power, Switching Fast Recovery Diode 600V TO-252 IF=8A
-
RJU60C3SDPD-E0#J2
Renesas Electronics America
DIODE GEN PURP 600V 10A TO252. Diodes - General Purpose, Power, Switching FRD 600V/30A/90ns Trr/TO-252
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