Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Diodes - Rèkteur - Single
  5. JAN1N5806URS

Microsemi Corporation - JAN1N5806URS

KEY Part #: K6438271

JAN1N5806URS Pricing (USD) [4311PC Stock]

  • 1 pcs$10.09932
  • 100 pcs$10.04907
Nimewo Pati:
JAN1N5806URS
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 150V 1A APKG. Rectifiers Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Microsemi Corporation JAN1N5806URS electronic components. JAN1N5806URS can be shipped within 24 hours after order. If you have any demands for JAN1N5806URS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5806URS Atribi pwodwi yo

Nimewo Pati : JAN1N5806URS
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 150V 1A APKG
Seri : Military, MIL-PRF-19500/477
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 875mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 1µA @ 150V
Kapasite @ Vr, F : 25pF @ 10V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, A
Pake Aparèy Founisè : A-MELF
Operating Tanperati - Junction : -65°C ~ 175°C

Dènye nouvèl

Microsemi Adaptec® HBA 1100 SAS/SATA Host Bus Adapters
Ou ka enterese tou
  • SE20FGHM3/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.7A DO219AB. Rectifiers 2A,400V ESD PROTECTION, SMF RECT

  • SE15FJHM3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1.5A DO219AB. Rectifiers 1.5A,600V ESD PROTECTION, SMF RECT

  • SE15FJ-M3/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1.5A DO219AB. Rectifiers 1.5A,600V ESD PROTECTION, SMF RECT

  • SE15FG-M3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.5A DO219AB. Rectifiers 1.5A,400V ESD PROTECTION, SMF RECT

  • SE15FD-M3/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.5A DO219AB. Rectifiers 1.5A,200V ESD PROTECTION, SMF RECT

  • SE20FJHM3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1.7A DO219AB. Rectifiers 2A,600V ESD PROTECTION, SMF RECT

Pati cho