RS3E135BNGZETB Pricing (USD) [248329PC Stock]
- 1 pcs$0.14895
- 2,500 pcs$0.14130
- Nimewo Pati:
- RS3E135BNGZETB
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CHANNEL 30V 9.5A 8SOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RS3E135BNGZETB electronic components. RS3E135BNGZETB can be shipped within 24 hours after order. If you have any demands for RS3E135BNGZETB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS3E135BNGZETB Atribi pwodwi yo
Nimewo Pati :
RS3E135BNGZETB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CHANNEL 30V 9.5A 8SOP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
14.6 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
8.3nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
680pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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