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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. WPB4001-1E

ON Semiconductor - WPB4001-1E

KEY Part #: K6402769

[2590PC Stock]

    Nimewo Pati:
    WPB4001-1E
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 500V 26A TO3P3L.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor WPB4001-1E electronic components. WPB4001-1E can be shipped within 24 hours after order. If you have any demands for WPB4001-1E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    WPB4001-1E Atribi pwodwi yo

    Nimewo Pati : WPB4001-1E
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 500V 26A TO3P3L
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 260 mOhm @ 13A, 10V
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : 87nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 2250pF @ 30V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.5W (Ta), 220W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-3P-3L
    Pake / Ka : TO-3P-3, SC-65-3

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