Nimewo Pati :
BYC30X-600P,127
Manifakti :
WeEn Semiconductors
Deskripsyon :
DIODE GEN PURP 600V 30A TO220F
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
30A
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2 Full Pack, Isolated Tab
Pake Aparèy Founisè :
TO-220FP
Operating Tanperati - Junction :
175°C (Max)