Diodes Incorporated - DMN65D8LDW-7

KEY Part #: K6525412

DMN65D8LDW-7 Pricing (USD) [1244959PC Stock]

  • 1 pcs$0.02971
  • 3,000 pcs$0.02723

Nimewo Pati:
DMN65D8LDW-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 60V 0.18A SOT363.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN65D8LDW-7 electronic components. DMN65D8LDW-7 can be shipped within 24 hours after order. If you have any demands for DMN65D8LDW-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN65D8LDW-7 Atribi pwodwi yo

Nimewo Pati : DMN65D8LDW-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 60V 0.18A SOT363
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180mA
RD sou (Max) @ Id, Vgs : 6 Ohm @ 115mA, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.87nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 22pF @ 25V
Pouvwa - Max : 300mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SOT-363