Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET P-CH 12V 4A SOT23
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
31 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1357pF @ 10V
Disipasyon Pouvwa (Max) :
800mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23
Pake / Ka :
TO-236-3, SC-59, SOT-23-3