Vishay Semiconductor Diodes Division - FESB8AT-E3/81

KEY Part #: K6456455

FESB8AT-E3/81 Pricing (USD) [117965PC Stock]

  • 1 pcs$0.31354
  • 800 pcs$0.29367

Nimewo Pati:
FESB8AT-E3/81
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 50V 8A TO263AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Tiristors - SCR and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division FESB8AT-E3/81 electronic components. FESB8AT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB8AT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB8AT-E3/81 Atribi pwodwi yo

Nimewo Pati : FESB8AT-E3/81
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 50V 8A TO263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 950mV @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 10µA @ 50V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -55°C ~ 150°C

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