Vishay Semiconductor Diodes Division - VS-MBR20100CT-N3

KEY Part #: K6475964

VS-MBR20100CT-N3 Pricing (USD) [5922PC Stock]

  • 1,000 pcs$0.28480

Nimewo Pati:
VS-MBR20100CT-N3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 100V 10A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-MBR20100CT-N3 electronic components. VS-MBR20100CT-N3 can be shipped within 24 hours after order. If you have any demands for VS-MBR20100CT-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-MBR20100CT-N3 Atribi pwodwi yo

Nimewo Pati : VS-MBR20100CT-N3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 100V 10A TO220AB
Seri : Automotive, AEC-Q101
Estati Pati : Obsolete
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 10A
Voltage - Forward (Vf) (Max) @ Si : 800mV @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 100µA @ 100V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB

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