[778PC Stock]
- Nimewo Pati:
- VS-GT400TH120N
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- IGBT 1200V 600A 2119W DIAP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - JFETs and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-GT400TH120N electronic components. VS-GT400TH120N can be shipped within 24 hours after order. If you have any demands for VS-GT400TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GT400TH120N Atribi pwodwi yo
Nimewo Pati :
VS-GT400TH120N
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT 1200V 600A 2119W DIAP
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
Trench
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
600A
Pouvwa - Max :
2119W
Vce (sou) (Max) @ Vge, Ic :
2.15V @ 15V, 400A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
28.8nF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Double INT-A-PAK (3 + 8)
Pake Aparèy Founisè :
Double INT-A-PAK
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