Vishay Semiconductor Diodes Division - S4PGHM3_A/I

KEY Part #: K6432013

S4PGHM3_A/I Pricing (USD) [463895PC Stock]

  • 1 pcs$0.07973
  • 6,500 pcs$0.07226

Nimewo Pati:
S4PGHM3_A/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 400V 4A TO277A. Rectifiers 4A, 400V, SMPC STD, SM Rect
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S4PGHM3_A/I electronic components. S4PGHM3_A/I can be shipped within 24 hours after order. If you have any demands for S4PGHM3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S4PGHM3_A/I Atribi pwodwi yo

Nimewo Pati : S4PGHM3_A/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 4A TO277A
Seri : Automotive, AEC-Q101, eSMP®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 4A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 4A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2.5µs
Kouran - Fèy Reverse @ Vr : 10µA @ 400V
Kapasite @ Vr, F : 30pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -55°C ~ 150°C

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