Vishay Semiconductor Diodes Division - VS-GT100TP60N

KEY Part #: K6533284

VS-GT100TP60N Pricing (USD) [427PC Stock]

  • 1 pcs$108.51287
  • 24 pcs$89.00937

Nimewo Pati:
VS-GT100TP60N
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT 600V 160A 417W INT-A-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GT100TP60N electronic components. VS-GT100TP60N can be shipped within 24 hours after order. If you have any demands for VS-GT100TP60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT100TP60N Atribi pwodwi yo

Nimewo Pati : VS-GT100TP60N
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 600V 160A 417W INT-A-PAK
Seri : -
Estati Pati : Active
Kalite IGBT : Trench
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 160A
Pouvwa - Max : 417W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 7.71nF @ 30V
Antre : Standard
NTC thermistor : No
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : INT-A-PAK (3 + 4)
Pake Aparèy Founisè : INT-A-PAK

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