Vishay Semiconductor Diodes Division - VS-GA200HS60S1

KEY Part #: K6533468

[823PC Stock]


    Nimewo Pati:
    VS-GA200HS60S1
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    IGBT 600V 480A 830W.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - JFETs and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division VS-GA200HS60S1 electronic components. VS-GA200HS60S1 can be shipped within 24 hours after order. If you have any demands for VS-GA200HS60S1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-GA200HS60S1 Atribi pwodwi yo

    Nimewo Pati : VS-GA200HS60S1
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : IGBT 600V 480A 830W
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Nou konte genyen : Half Bridge
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 480A
    Pouvwa - Max : 830W
    Vce (sou) (Max) @ Vge, Ic : 1.21V @ 15V, 200A
    Kouran - Cutoff Pèseptè (Max) : 1mA
    Antre kapasite (Cies) @ Vce : 32.5nF @ 30V
    Antre : Standard
    NTC thermistor : No
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : INT-A-Pak
    Pake Aparèy Founisè : INT-A-PAK

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