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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDMA1028NZ-F021

ON Semiconductor - FDMA1028NZ-F021

KEY Part #: K6521888

FDMA1028NZ-F021 Pricing (USD) [327558PC Stock]

  • 1 pcs$0.11292
Nimewo Pati:
FDMA1028NZ-F021
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 20V 3.7A MICROFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMA1028NZ-F021 electronic components. FDMA1028NZ-F021 can be shipped within 24 hours after order. If you have any demands for FDMA1028NZ-F021, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMA1028NZ-F021 Atribi pwodwi yo

Nimewo Pati : FDMA1028NZ-F021
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 20V 3.7A MICROFET
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A
RD sou (Max) @ Id, Vgs : 68 mOhm @ 3.7A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 340pF @ 10V
Pouvwa - Max : 700mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-VDFN Exposed Pad
Pake Aparèy Founisè : 6-MicroFET (2x2)

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