Infineon Technologies - BSC0925NDATMA1

KEY Part #: K6525386

BSC0925NDATMA1 Pricing (USD) [253664PC Stock]

  • 1 pcs$0.14581
  • 5,000 pcs$0.14207

Nimewo Pati:
BSC0925NDATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2N-CH 30V 15A TISON8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC0925NDATMA1 Atribi pwodwi yo

Nimewo Pati : BSC0925NDATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 30V 15A TISON8
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : 2 N Channel (Dual Buck Chopper)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A
RD sou (Max) @ Id, Vgs : 5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1157pF @ 15V
Pouvwa - Max : 2.5W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : PG-TISON-8