[3956PC Stock]
- Nimewo Pati:
- IRF6702M2DTR1PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 15A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF6702M2DTR1PBF electronic components. IRF6702M2DTR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6702M2DTR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6702M2DTR1PBF Atribi pwodwi yo
Nimewo Pati :
IRF6702M2DTR1PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 30V 15A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A
RD sou (Max) @ Id, Vgs :
6.6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1380pF @ 15V
Pouvwa - Max :
2.7W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
DirectFET™ Isometric MA
Pake Aparèy Founisè :
DIRECTFET™ MA
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