Vishay Siliconix - SQ2361EES-T1-GE3

KEY Part #: K6405474

[1652PC Stock]


    Nimewo Pati:
    SQ2361EES-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET P-CH 60V 2.5A SOT23.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SQ2361EES-T1-GE3 electronic components. SQ2361EES-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SQ2361EES-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SQ2361EES-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SQ2361EES-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET P-CH 60V 2.5A SOT23
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 150 mOhm @ 2.4A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 545pF @ 30V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-23-3 (TO-236)
    Pake / Ka : TO-236-3, SC-59, SOT-23-3