Infineon Technologies - BSF035NE2LQXUMA1

KEY Part #: K6420667

BSF035NE2LQXUMA1 Pricing (USD) [227246PC Stock]

  • 1 pcs$0.16276
  • 5,000 pcs$0.15623

Nimewo Pati:
BSF035NE2LQXUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 25V 22A 2WDSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSF035NE2LQXUMA1 Atribi pwodwi yo

Nimewo Pati : BSF035NE2LQXUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 25V 22A 2WDSON
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Ta), 69A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1862pF @ 12V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.2W (Ta), 28W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : MG-WDSON-2, CanPAK M™
Pake / Ka : 3-WDSON

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