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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTZS3151PT1H

ON Semiconductor - NTZS3151PT1H

KEY Part #: K6412409

NTZS3151PT1H Pricing (USD) [13455PC Stock]

  • 8,000 pcs$0.04046
Nimewo Pati:
NTZS3151PT1H
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 20V 0.86A SOT563.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTZS3151PT1H electronic components. NTZS3151PT1H can be shipped within 24 hours after order. If you have any demands for NTZS3151PT1H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTZS3151PT1H Atribi pwodwi yo

Nimewo Pati : NTZS3151PT1H
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 20V 0.86A SOT563
Seri : -
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 860mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 950mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.6nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 458pF @ 16V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 170mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-563-6
Pake / Ka : SOT-563, SOT-666

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