[3508PC Stock]
- Nimewo Pati:
- PHB119NQ06T,118
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 55V 75A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PHB119NQ06T,118 electronic components. PHB119NQ06T,118 can be shipped within 24 hours after order. If you have any demands for PHB119NQ06T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB119NQ06T,118 Atribi pwodwi yo
Nimewo Pati :
PHB119NQ06T,118
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 55V 75A D2PAK
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
75A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.1 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2820pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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