IXYS - IXFE48N50Q

KEY Part #: K6406606

IXFE48N50Q Pricing (USD) [5087PC Stock]

  • 1 pcs$8.98593
  • 10 pcs$8.94123

Nimewo Pati:
IXFE48N50Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 41A SOT-227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Modil pouvwa chofè and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in IXYS IXFE48N50Q electronic components. IXFE48N50Q can be shipped within 24 hours after order. If you have any demands for IXFE48N50Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFE48N50Q Atribi pwodwi yo

Nimewo Pati : IXFE48N50Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 41A SOT-227B
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 41A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 110 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id : 4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 190nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 400W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC