Infineon Technologies - IRFR3410TRRPBF

KEY Part #: K6406514

[1293PC Stock]


    Nimewo Pati:
    IRFR3410TRRPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 100V 31A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Diodes - Zener - Arrays, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRFR3410TRRPBF electronic components. IRFR3410TRRPBF can be shipped within 24 hours after order. If you have any demands for IRFR3410TRRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFR3410TRRPBF Atribi pwodwi yo

    Nimewo Pati : IRFR3410TRRPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 100V 31A DPAK
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 39 mOhm @ 18A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1690pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3W (Ta), 110W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D-Pak
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63