Vishay Siliconix - 2N7002E

KEY Part #: K6406614

2N7002E Pricing (USD) [1258PC Stock]

  • 3,000 pcs$0.01641

Nimewo Pati:
2N7002E
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 60V 240MA SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix 2N7002E electronic components. 2N7002E can be shipped within 24 hours after order. If you have any demands for 2N7002E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7002E Atribi pwodwi yo

Nimewo Pati : 2N7002E
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 60V 240MA SOT23
Seri : -
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 240mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 250mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.6nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 21pF @ 5V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 350mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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