EGP51B-E3/C Pricing (USD) [212500PC Stock]
- 1 pcs$0.17406
- Nimewo Pati:
- EGP51B-E3/C
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 5A DO201AD. Rectifiers 5A,100V,50NS
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division EGP51B-E3/C electronic components. EGP51B-E3/C can be shipped within 24 hours after order. If you have any demands for EGP51B-E3/C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGP51B-E3/C Atribi pwodwi yo
Nimewo Pati :
EGP51B-E3/C
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 5A DO201AD
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
5A
Voltage - Forward (Vf) (Max) @ Si :
960mV @ 5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
117pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AD, Axial
Pake Aparèy Founisè :
DO-201AD
Operating Tanperati - Junction :
-65°C ~ 175°C
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