IXTH20N65X Pricing (USD) [13264PC Stock]
- 1 pcs$3.41983
- 10 pcs$3.07609
- 100 pcs$2.52905
- 500 pcs$2.11893
- 1,000 pcs$1.84552
- Nimewo Pati:
- IXTH20N65X
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 650V 20A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH20N65X electronic components. IXTH20N65X can be shipped within 24 hours after order. If you have any demands for IXTH20N65X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH20N65X Atribi pwodwi yo
Nimewo Pati :
IXTH20N65X
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 650V 20A TO-247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
210 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1390pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
320W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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