IXYS - IXTC13N50

KEY Part #: K6406996

[1126PC Stock]


    Nimewo Pati:
    IXTC13N50
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 500V 12A ISOPLUS220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in IXYS IXTC13N50 electronic components. IXTC13N50 can be shipped within 24 hours after order. If you have any demands for IXTC13N50, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTC13N50 Atribi pwodwi yo

    Nimewo Pati : IXTC13N50
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 500V 12A ISOPLUS220
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 400 mOhm @ 6.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 2.5mA
    Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2800pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 140W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : ISOPLUS220™
    Pake / Ka : ISOPLUS220™