EGF1B-E3/67A Pricing (USD) [388232PC Stock]
- 1 pcs$0.09527
- 6,000 pcs$0.08533
- Nimewo Pati:
- EGF1B-E3/67A
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 1A DO214BA. Rectifiers 1.0 Amp 100V 50ns
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division EGF1B-E3/67A electronic components. EGF1B-E3/67A can be shipped within 24 hours after order. If you have any demands for EGF1B-E3/67A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1B-E3/67A Atribi pwodwi yo
Nimewo Pati :
EGF1B-E3/67A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 1A DO214BA
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
15pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214BA
Pake Aparèy Founisè :
DO-214BA (GF1)
Operating Tanperati - Junction :
-65°C ~ 175°C
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